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| SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 NOVEMBER 93 7 FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage FZTA42 C E COMPLIMENTARY TYPE FZTA92 PARTMARKING DETAIL DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg VALUE 300 300 5 100 500 2 -55 to +150 UNIT V V V mA mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 5 0.1 0.1 0.5 0.9 25 40 40 50 6 MHz pF TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0* IE=100A, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 302 |
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